Deposition of fluorine doped mdium oxide by atmospheric pressure chemical vapour deposition

摘要

We report the deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition (APCVD) using a previously unreported precursor combination; dimethylindium acetylacetonate, [Me_2ln(acac)] and trifluoroacetic acid (TFA). This process is potentially scalable for high throughput, large area production. [Me_2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds. Cubic fluorine doped indium oxide (F.In_2O_3) was deposited at a substrate temperature of 550 ℃ with growth rates exceeding 8 nm/s. Resistivity was 8 × 10 ~(-4) Ω cm and transmission for a 200 nm film was > 80% with less than l%haze.