F-doped SnO_2 thin films grown on flexible substrates at low temperatures by pulsed laser deposition

摘要

Fluorine-doped tin oxide (SnO_2:F) films were deposited on polyethersulfone plastic substrates by pulsed laser deposition. The electrical and optical properties of the SnO_2:F films were investigated as a function of deposition conditions such as substrate température and oxygen partial pressure during deposition. High quality SnO_2:F films were achieved under an optimum oxygen pressure range (7.4-8 Pa) at relatively low growth temperatures (25-150 ℃). As-deposited films exhibited low electrical resistivities of 1-7 mil-cm, high optical transmittance of 80-90% in the visible range, and optical band-gap energies of 3.87-3.96 eV. Atomic force microscopy measurements revealed a reduced root mean square surface roughness of the SnO_2:F films compared to that of the bare substrates indicating planarization of the underlying substrate.