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机译:使用金属有机化学气相沉积法在通过蚀刻纳米级Au液滴形成的纳米图案化Si(111)上进行GaN纳米线的选择性区域生长
Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD),Chonbuk National University, Jeonju 561-756, South Korea;
Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD),Chonbuk National University, Jeonju 561-756, South Korea;
Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD),Chonbuk National University, Jeonju 561-756, South Korea;
Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD),Chonbuk National University, Jeonju 561-756, South Korea;
Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD),Chonbuk National University, Jeonju 561-756, South Korea;
Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD),Chonbuk National University, Jeonju 561-756, South Korea;
Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD),Chonbuk National University, Jeonju 561-756, South Korea;
gallium nitride; nanowires; gold; droplets; etching; patterning; scanning electron microscopy;
机译:金属有机化学气相沉积法合成在Si和Si(111)上由Au和自催化剂形成的液滴上生长的InN纳米线
机译:通过金属有机化学气相沉积在Si(111)上使用μ-GaN晶种分两步生长高质量的长n-GaN:Si纳米线
机译:通过金属有机化学气相沉积法在Si(111)衬底上生长具有Au + Ga固溶体的GaN纳米线
机译:金辅助金属有机化学气相沉积形成的InP纳米线:生长温度的影响
机译:III-V族半导体纳米线阵列的生长和表征通过选择性区域金属有机化学气相沉积。
机译:金属有机化学气相沉积在InP(111)B上In(As)P纳米线的自催化生长和表征
机译:辅助金属有机化学气相沉积形成砷化镓纳米线:生长温度的影响
机译:摘要摘要:用于mOCVD(金属有机化学气相沉积)的Inp衬底的热活化蚀刻