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机译:PbS / Si(100)薄膜的制备及室温光致发光特性
Silicon Technology Development Unit, 02 Bd Frantz Fanon, B.P 140 Algiers, Algeria;
Silicon Technology Development Unit, 02 Bd Frantz Fanon, B.P 140 Algiers, Algeria;
Algiers Nuclear Research Center (CRNA), 2 Bd Frantz Fanon, BP 399 Alger Gare, Alger, Algeria;
Science and Technology University (USTHB), Chemical Faculty, Algiers, Algeria;
lead sulfide; photoluminescence; quantum confinement; nanoparticles; chemical bath deposition;
机译:溶胶-凝胶法制备高(100)取向Pb_(0.8)La_(0.1)Ca_(0.1)Ti_(0.975)O3薄膜的低温制备和电性能
机译:高(100)取向Pb 0.8 sub> La 0.1 sub> Ca 0.1 sub> Ti 0.975 sub> O的低温制备和电性能溶胶-凝胶法制备的 3 sub>薄膜
机译:热还原法制备多晶PbSe薄膜及其表征
机译:平面热电温温度依赖于PBSNSE / PBSE薄膜超晶格材料从100K到300K
机译:单混合前驱体MOCVD制备钇钡氧化铜高转变温度超导薄膜及其表征。
机译:a-(PbSe)100-xCdx硫属元素化物纳米粒子薄膜的合成与表征
机译:a-(PbSe)100-xCdx硫属元素化物纳米粒子薄膜的合成与表征