Silicon nanostructures fabricated by Au and SiH_4 co-deposition technique using hot-wire chemical vapor deposition

摘要

In this study, the fabrication of Si nanostructures by Au and SiH_4 co-deposition technique using hot-wire chemical vapor deposition was demonstrated. A high deposition rate of 2.7 nm/s and a high density of silicon nanostructures with a diameter of about 140 nm were obtained at T_s of 250 ℃. An increase in T_s led to a significant reduction in the size of the nanostructures. However, coalescence on the nanostructures was observed at T_s of 400 ℃. The Si nanostructures exhibited a highly crystalline structure, which was induced by Au crystallites. The crystallite size and crystallinity of the Si nanostructures amplified with the increase in T_s. The presence of nanostructures enhanced the surface roughness of the samples and clearly reduced the reflection, especially in the visible region.