Fabrication of Fe_3Si/CaF_2 heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy

摘要

We have fabricated 200-nm-diameter ferromagnetic resonant tunneling diodes (FM-RTDs) using CaF_2/Fe_3Si heterostructures on Si( 111) substrates, by selected-area molecular beam epitaxy (MBE) using electron-beam (EB) lithography. Clear negative differential resistances (NDRs) were observed in the current-voltage (I-V) characteristics at room temperature (RT). The reproducibility of the I-V characteristics was greatly improved, and approximately 40% of the FM-RTDs showed clear NDRs at RT.