机译:等离子体增强化学气相沉积a-SiC:H薄膜的热导率和声速测量
Vassar College, Physics and Astronomy Department, Poughkeepsie, NY 12604, USA;
Vassar College, Physics and Astronomy Department, Poughkeepsie, NY 12604, USA;
Vassar College, Physics and Astronomy Department, Poughkeepsie, NY 12604, USA;
Intel Corporation, Logic Technology Development, Hillsboro, OR 97124, USA;
Intel Corporation, Logic Technology Development, Hillsboro, OR 97124, USA;
Amorphous silicon carbide; Plasma-enhanced chemical vapor deposition; Thermal conductivity; Sound velocity; Young's modulus; Picosecond ultrasonics; Time-domain thermoreflectance;
机译:高温退火对感应耦合等离子体增强化学气相沉积a-SiC:H薄膜的化学和机械性能的影响
机译:通过等离子体增强化学气相沉积法沉积的非晶碳化硅薄膜(a-SiC:H)作为恶劣环境应用中的保护涂层
机译:血浆增强化学气相沉积法沉积人血清白蛋白到a-SiC:H和a-C:H薄膜上
机译:等离子体增强化学气相沉积a-SiC:H薄膜中的刚性渗流
机译:将等离子体增强化学气相沉积的氮化硅薄膜建模为有限的几何形状
机译:N2:(N2 + CH4)比在低温等离子体增强化学气相沉积法生长疏水纳米结构氢化氮化碳薄膜中的作用研究
机译:通过等离子体增强化学气相沉积法沉积的聚萜烯薄膜的光学和化学性质