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机译:007842.tif通过射频等离子体增强化学气相沉积工艺在SiO_x膜沉积过程中将离子能量撞击到基板上的影响
Material Science Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Cuwahati - 781035, Assam, India;
Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai - 400085, India;
Material Science Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Cuwahati - 781035, Assam, India;
Material Science Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Cuwahati - 781035, Assam, India;
Material Science Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Cuwahati - 781035, Assam, India;
Technical Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai - 400085, India;
Technical Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai - 400085, India;
Mechanical Metallurgy Division, Bhabha Atomic Research Center, Trombay, Mumbai - 400085, India;
High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai - 400085, India;
Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai - 400085, India;
RF plasma; Ion energy; Thin films; Plasma diagnostics; Silicon oxide; Plasma assisted chemical vapor deposition; Hexamethyldisiloxane;
机译:蒸发和等离子体增强化学气相沉积在聚合物基底上沉积的SiO_x薄膜的生长模式
机译:在低基板温度下通过等离子体增强化学气相沉积和热线化学气相沉积沉积的薄膜的机械和压阻特性
机译:通过等离子增强化学气相沉积(具有双频,超高频和高频),在低温下高速沉积SiO_x膜并获得机械性能
机译:用于晶体光伏太阳能电池的柔性多晶金属基板上的异质外延硅薄膜:物理气相沉积与等离子体增强化学气相沉积之间的比较
机译:通过等离子增强化学气相沉积在聚合物基材上沉积无机薄膜。
机译:射频等离子体增强化学气相沉积(RF PECVD)反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
机译:通过等离子体增强的化学气相沉积和硅化物 - 包层硅电极形成的相关方法选择性沉积硅化钛膜