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首页> 外文期刊>Thin Solid Films >Ferroelectric properties of epitaxial Bi_(3.15)Ndo.85Ti_30_(12) films on SiO_2/Si using biaxially oriented MgO as templates
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Ferroelectric properties of epitaxial Bi_(3.15)Ndo.85Ti_30_(12) films on SiO_2/Si using biaxially oriented MgO as templates

机译：以双轴取向MgO为模板的SiO_2 / Si上外延Bi_（3.15）Ndo.85Ti_30_（12）薄膜的铁电性能

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摘要

High quality epitaxial Bi_(3.15)Nd_(0.85)Ti_30_(12) (BNT) thin films with thicknesses from 30 to 80 nm have been integrated on S1O2/S1 substrates. MgO templates deposited by ion-beam-assisted deposition and SrRuO_3 (SRO) buffer layers processed by pulsed laser deposition have been used to initiate the epitaxial growth of BNT films on the amorphous SiO_2/Si substrates. The structural and ferroelectric properties were investigated. Microstructural studies by X-ray diffraction and transmission electron microscopy revealed high quality crystalline with an epitaxial relationship of (001 )_(BN)tII(001 )_(SR)oll(001 )_(Mg)o and [100]_(BNT)|l10]sroII[1 10]_(Mgo.) A ferroelectric hysteresis loop with a remanent polarization of 3.1 nC/cm2 has been observed for a 30 nm thick film. The polarization exhibits a fatigue-free characteristic up to 1.44x 10~(10) switching cydes.
机译：高质量外延Bi_（3.15）Nd_（0.85）Ti_30_（12）（BNT）薄膜的厚度为30至80 nm，已集成在S1O2 / S1基板上。通过离子束辅助沉积法制备的MgO模板和通过脉冲激光沉积法处理的SrRuO_3（SRO）缓冲层已用于启动BNT膜在非晶SiO_2 / Si衬底上的外延生长。研究了结构和铁电性能。通过X射线衍射和透射电子显微镜进行的微结构研究表明，高品质晶体具有（001）_（BN）tII（001）_（SR）ll（001）_（Mg）o和[100] _（ BNT）| 10] sroII [1 10] _（Mgo。）。对于30 nm厚的薄膜，观察到铁电磁滞回线的剩余极化强度为3.1 nC / cm2。极化表现出高达1.44x 10〜（10）的开关循环的无疲劳特性。

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  • 来源
    《Thin Solid Films》 |2011年第22期|p.8023-8026|共4页
  • 作者

    QQ Meng; R. Zhao; W.W. Li; J. Yang; H. Wang; L Stan; H. Yang;

  • 作者单位

    Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China;

    Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China;

    Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China;

    Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China;

    Department of Electrical and Computer Engineering, Texas ABM University, College Station, TX 77843-3128, United States;

    Superconductivity Technology Center, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos 87545, NM, United States;

    Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China;

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  • 关键词

    Bi_(4-x)Nd_xTi_30_(12); SiO_2/Si; Thin films; Ferroelectric properties; Bismuth-Neodymium Titanate; X-ray diffraction; Transmission Electron Microscopy;

    机译：Bi_（4-x）Nd_xTi_30_（12）;SiO_2 / Si;薄膜;铁电性能;钛钕铋钕;X射线衍射;透射电镜;

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