A study on the plasma polymer thin film surface modification for DNA alignment by using high energy electron beam irradiation

摘要

The plasma polymer thin films were deposited on Si(lOO) substrate by PECVD (plasma enhanced chemical vapor deposition) method. Liquid cyclohexene was used as single organic precursor. It was heated up to 60 ℃ and bubbled up by hydrogen gas, which flow rate was 50 sccm (standard cubic centimeters per min). Deposition temperature was room temperature. Plasma was ignited by a radio frequency (RF; 13.56 MHz) of 10W.rnAs-deposited plasma polymer thin films were treated by e-beam of 300 keV with various adsorption radiation doses. The plasma polymer films, which were treated by high energy e-beam (HEEB), were investigated by FT-IR (Fourier Transform Infrared), XPS (X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy), and the water contact angles.rnFrom IR spectra, the intensity of -OH functional group is increased by increasing electron dose rate. XPS results also show that the intensity of O_15 peak is increased by increasing electron dose rate. C_1s peak shows that oxygen bonded at carbon site. The water contact angles are decreased by increasing electron dose rate. From the AFM analysis, we observed the formation of -DNA (deoxyribonudeic acid) array on plasma polymer film, which was treated by HEEB with 14 kGy of adsorption radiation dose.