机译:体声谐振器应用的钼底电极和压电氮化铝膜的脉冲直流溅射
Dept. of Materials Engineering, Mingchi University of Technology, 84 Cungjuan Rd., Taishan, Taipei 24301, Taiwan;
Dept. of Materials Engineering, Mingchi University of Technology, 84 Cungjuan Rd., Taishan, Taipei 24301, Taiwan;
Dept. of Materials Engineering, Mingchi University of Technology, 84 Cungjuan Rd., Taishan, Taipei 24301, Taiwan;
Mo; A1N; Pulsed-DC sputtering; FWHM; Residual stress;
机译:薄膜体声波谐振器反应磁控溅射氮化铝薄膜的沉积与表征
机译:在电极边缘上使用薄环的氮化铝基薄膜体声谐振器中的无能量消耗的杂散抑制
机译:铝氮化nitride薄膜体声谐振器,用于宽带应用
机译:射频磁控溅射在硅上沉积高取向Ta
机译:射频反应磁控溅射在低温下沉积在硅上的压电氮化铝薄膜的声波器件特性
机译:用于压电应用的氮化铝(002)薄膜的反应溅射:综述
机译:氮化铝的反应溅射(002)压电应用薄膜:综述