Electrical memory features of ferromagnetic CoFeAISi nano-particles embedded in metal-oxide-semiconductor matrix

摘要

Half-metallic Heusler material Co_2FeAl_0.5Si_0.5 (CFAS) nano-particles (NPs) embedded in metal-oxide-semiconductor (MOS) structures with thin HfO_2 tunneling and MgO control oxides were investigated. The CFAS NPs were prepared by rapid thermal annealing. The formation of well-controlled CFAS NPs on thin HfO_2 tunneling oxide was confirmed by atomic force microscopy (AFM). Memory characteristics of CFAS NPs in MOS devices exhibited a large memory window of 4.65 V, as well as good retention and endurance times of 10~5 cycles and 10~5 s, respectively, demonstrating the potential of CFAS NPs as promising candidates for use in charge storage.