Electrical responses of chalcogenide films in the photodoping process

摘要

The photodoping process in Al/AsS_2/Ag tri-layer films has been studied through measurements of electrical impedance, photodoped-layer thickness, and photocurrent. Frequency dependence of the impedance suggests that the sample under photodoping can be approximated by an equivalent electrical circuit. A thickness of photodoped layers, which is estimated from the impedance, is in agreement with a geometrical thickness measured by an atomic force microscope for chemically etched samples. Under the photodoping (with zero bias voltages), a photocurrent remains constant at ～ 5 pA, and near the completion it increases to ～1 nA, which is followed with a gradual decrease. By applying a bias voltage between the top (semi-transparent Al) and bottom (Ag) electrodes, we can change a photodoping rate by an order. This rate change is attributable to the modulation of an effective electric field in the doped layer, which induces the motion of Ag ions.