Formation of CoN_x ultra-thin films during direct-current nitrogen ion sputtering in ultrahigh vacuum

摘要

This study reports the formation of ultra-thin cobalt nitride (CoN_x) films on a Co/ZnO(002) crystal by low-energy ion sputtering of nitrogen in an ultrahigh vacuum system. The CoN_x film formed during ion bombardment in which the nitrogen plasma (N~+) results in both sputtering and implantation in the formation process of CoN_x, especially for the Co adsorbed layers. Auger electron spectroscopy analysis shows that the composition ratio x as a function of sputtering time was highly related to the N~+ ion energy that was varied from 0.5 to 2 keV. The composition ratio x of CoN_x films is inversely proportional to the ion energy. Low-energy ion sputtering is possible to fabricate ultra-thin CoN_x films and to adjust their chemical compositions.