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机译:氢化纳米晶硅薄膜晶体管的电容分析
Department of Physics, Karabuk University, 78050 Karabuk, Turkey;
Department of Electrical-Electronics Engineering, Karabuk University, 78050 Karabuk, Turkey;
Department of Physics, Middle East Technical University, 06531 Ankara, Turkey;
Department of Physics, Middle East Technical University, 06531 Ankara, Turkey;
hydrogenated nanocrystalline silicon; thin film transistor; metal-insulator-amorphous silicon; capacitance; inversion; hopping conductivity;
机译:与氢化非晶硅薄膜晶体管相比,非晶$ hbox {InGaZnO} _ {4} $薄膜晶体管的双栅特性
机译:氢化非晶硅薄膜晶体管中基于Cu-Mn合金的源/漏电极的最佳界面膜条件的研究
机译:低温氮化硅膜对氢化非晶硅薄膜晶体管电性能的影响
机译:常规等离子增强化学气相沉积薄膜晶体管生长的低温(75℃)氢化纳米晶硅薄膜
机译:氢化非晶硅薄膜晶体管的电容电压特性及二维数值分析
机译:低温多晶硅薄膜晶体管中使用负电容的sub-kT / q亚阈值斜率
机译:氢化非晶硅基薄膜晶体管的分析电容模型