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机译:氢等离子体处理对高密度钨纳米晶非易失性存储器中电荷存储特性的影响
Department of Electrical Engineering & Institute of Electronic Engineering, National Tsing Hua University, Taiwan;
Department of Electrical Engineering & Institute of Electronic Engineering, National Tsing Hua University, Taiwan;
Department of Physics and Institute of Electro-Optical Engineering, and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan;
Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan;
Institute Photonics of Technologies National Tsing Hua University, Taiwan;
Institute Photonics of Technologies National Tsing Hua University, Taiwan;
Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan;
ProMOS Technologies, No. 19 Li Hsin Rd., Science-Based Industrial Park, Hsinchu, Taiwan;
ProMOS Technologies, No. 19 Li Hsin Rd., Science-Based Industrial Park, Hsinchu, Taiwan;
hydrogen plasma; tungsten nanocrystals; nonvolatile memory; x-ray photoelectron spectroscopy;
机译:钨纳米晶非易失性存储器的等离子体浸没离子注入处理特性
机译:具有NH_3-等离子处理和Pd-纳米晶体嵌入式电荷存储层的氧化硅-氮化物-氧化硅-硅类型非易失性存储器的稳健数据保留和卓越的耐久性
机译:氧等离子体处理下钨纳米晶体的非易失性存储效应
机译:用于非易失性存储器应用的CEO {SUB} 2纳米晶体的高电荷存储特性
机译:具有工程纳米晶体浮栅的新型非易失性存储器。
机译:减少氧空位的HfO2阻挡层改善了Au纳米晶体存储器的电荷存储特性
机译:用NH3氮化GdO作为非易失性存储器应用的电荷存储层改善存储特性