Optical and electrical properties of zinc oxide/indium/zinc oxide multilayer structures

摘要

Zinc oxide/indium/zinc oxide multilayer structures have been obtained on glass substrates by magnetron sputtering. The effects of indium thickness on optical and electrical properties of the multilayer structures are investigated. Compared to a single zinc oxide layer, the carrier concentration increases from 8 × 10~(18)cm~(-3) to 1.8 × 10~(20) cm~(-3) and Hall mobility decreases from 10 cm~2/v s to 2 cm~2/v s for the multilayer structure at 8 nm of indium thickness. With the increase of indium thickness, the transmittance decreases and optical band gap shifts to lower energy in multilayer structures. Results are understood based on Schottky theory, interface scattering mechanism and the absorption of indium layer.