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机译:衬底温度对使用原子层沉积形成的Cu籽晶层的影响
Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Republic of Korea;
Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Republic of Korea;
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea;
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea;
Research and Development Division, Hynix, Icheon-si, Kyoungki-do 467-701, Republic of Korea;
Research and Development Division, Hynix, Icheon-si, Kyoungki-do 467-701, Republic of Korea;
cu seed layer; atomic layer deposition; cu interconnect; surface energy;
机译:O-2等离子体预处理对原子层沉积在不同沉积温度下在聚醚砜基板上生长的ZnO薄膜的影响
机译:(hfac)Cu(VTMOS)前体的铜种子层的原子层沉积
机译:异构转变对在不同衬底温度下真空沉积制备的Alq3非晶层特性的影响
机译:使用新型的基于羰基的钌前驱体和非氧化性反应物进行钌薄膜的低温原子层沉积;在铜金属化种子层上的应用
机译:低工艺温度下库珀种子层的等离子体增强原子层沉积。
机译:通过原子层沉积制备的各种衬底和ZnO超薄种子层对ZnO纳米线阵列生长的影响的研究
机译:通过原子层沉积制备的各种衬底和ZnO超薄种子层对ZnO纳米线阵列生长的影响的研究