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机译:4H-SiC低温化学气相沉积中氯化前体的研究
Department of Physics, Chemistry and Biology, Linkoping University, SE-58 183 Linkb'ping, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, SE-58 183 Linkb'ping, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, SE-58 183 Linkb'ping, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, SE-58 183 Linkb'ping, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, SE-58 183 Linkb'ping, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, SE-58 183 Linkb'ping, Sweden;
Department of Physics, Chemistry and Biology, Linkoping University, SE-58 183 Linkb'ping, Sweden;
silicon carbide; chemical-vapor-deposition; chlorinated precursor; low temperature film growth; gas phase phenomena;
机译:具有低温金属有机化学气相沉积生长的AI_2O_3栅绝缘体的高沟道迁移率4H-SiC金属氧化物半导体场效应晶体管
机译:射频等离子体增强化学气相沉积法从氯化材料中低温形成硅纳米晶点及其光学性质
机译:用于化学薄膜沉积的挥发性前体的热重分析研究蒸气压和源温度的估算
机译:利用SiCl_2H_2 / GeH_4前驱体减压化学气相沉积法制备高Ge含量的低温SiGe层
机译:氮化铝和氮化硅的低温热化学气相沉积和催化化学气相沉积
机译:使用低温气相陷阱热化学气相沉积法在蓝宝石衬底上生长的Zno微米/纳米结构:结构和光学性质
机译:在低沉积温度下,来自WF6和H 2 S前体的单层薄WS2晶体的化学气相沉积
机译:低温下非晶硅的激光光化学生长及热化学气相沉积的比较