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Experimental investigation of dimension effect on electrical oscillation in planar device based on VO_2 thin film

机译:基于VO_2薄膜的平面器件尺寸对电振荡影响的实验研究。

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摘要

In this paper, we report on an experimental analysis of dimension effect on a room-temperature electrical oscillation in a planar device using vanadium dioxide (VO_2) thin film. We investigate the variation of the oscillation current (/o) and frequency (f0) due to the variation of the dimension of the VO_2 devices, i.e., the length and width of the current channel of the device. For five different VO_2 devices with different dimensions, I_O andf_o are observed at room temperature in a simple circuit composed of a dc voltage source and a standard resistor including one of the VO2 devices. From the experimental investigation, it is concluded that the peak-to-peak amplitude of _I0 and f_0 decrease with the increase of the length and width of the current channel. This indicates thatf_0 depends on not only the external source voltage but also the device dimension.
机译:在本文中,我们报告了使用二氧化钒(VO_2)薄膜的平面器件中尺寸对室温电振荡的影响的实验分析。我们研究了由于VO_2器件的尺寸(即器件电流通道的长度和宽度)的变化而引起的振荡电流(/ o)和频率(f0)的变化。对于具有不同尺寸的五个不同的VO_2器件,在室温下,在一个简单的电路中观察到I_O和f_o,该电路由直流电压源和包括一个VO2器件的标准电阻组成。从实验研究可以得出结论,_I0和f_0的峰峰值幅度随电流通道的长度和宽度的增加而减小。这表明f_0不仅取决于外部电源电压,还取决于器件尺寸。

著录项

  • 来源
    《Thin Solid Films》 |2011年第10期|p.3383-3387|共5页
  • 作者单位

    Metal-Insulator Transition Device Team, ETRI, Daejeon 305-700, Republic of Korea, School of Advanced Device Technology, University of Science and Technology (UST), Daejeon 305-350, Republic of Korea;

    Metal-Insulator Transition Device Team, ETRI, Daejeon 305-700, Republic of Korea;

    Metal-Insulator Transition Device Team, ETRI, Daejeon 305-700, Republic of Korea, School of Electrical Engineering, Pukyong National University, Busan 608-737, Republic of Korea;

    Metal-Insulator Transition Device Team, ETRI, Daejeon 305-700, Republic of Korea;

    Metal-Insulator Transition Device Team, ETRI, Daejeon 305-700, Republic of Korea, School of Advanced Device Technology, University of Science and Technology (UST), Daejeon 305-350, Republic of Korea;

    Metal-Insulator Transition Device Team, ETRI, Daejeon 305-700, Republic of Korea, School of Advanced Device Technology, University of Science and Technology (UST), Daejeon 305-350, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    metal-insulator transition; v0_2 thin film; electrical oscillation; planar device; dimension effect;

    机译:金属-绝缘体跃迁;v0_2薄膜;电振荡;平面器件;尺寸效应;

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