White light emission and electrical properties of silicon oxycarbide-based metal-oxide-semiconductor diode

摘要

White light emission from silicon oxycarbide-based metal-oxide-semiconductor diode has been realized in this work. Emitted light is visible to the naked eyes as the bias voltage is increased higher than 15 V. Electroluminescence intensity increases linearly with current density. According to the analysis of conduction mechanisms in device, electron-hole radiative recombination at twofold coordinated silicon lone-pair centers, neutral oxygen vacancies, and E_