Effect of nitrogen on structural stability of bismuth doped GeTe films under thermal treatment

摘要

We investigated the microstructures and electrical properties of 8.4% nitrogen-doped GeBi(6 at%)Te and GeBi(6 at.%)Te films that were thermally annealed in air atmosphere. Despite annealing in air, GeBi(6 at%)Te films showed only phase transition from cubic to rhombohedral phases. However, the Ge oxide, island shaped metallic Te, and Ge-Bi-Te phases were generated in 8.4% nitrogen-doped GeBi(6 at.%)Te films.