Effects of crystalline nanoparticle incorporation on growth, structure, and properties of microcrystalline silicon films deposited by plasma chemical vapor deposition

摘要

We investigated effects of incorporation of Si crystalline nanoparticles into microcrystalline Si films during their deposition on their growth, structure and properties using multi-hollow discharge plasma chemical vapor deposition. The films with nanoparticles show a lower (220) orientation ratio than those without nanoparticles, whereas both the films have nearly the same film thickness and crystallinity. The films with nanoparticles have inverted conical growth, while the films without nanoparticles have columnar growth. Nucleation density of the films with nanoparticles is higher than that of the films without nanoparticles. Both photo and dark conductivities of the films with nanoparticles tend to be lower than those without nanoparticles. Thus, incorporation of small amount of nanoparticles into microcrystalline Si film affects growth, structure and properties of the films.