4H-silicon carbide thin junction based ultraviolet photodetectors

摘要

This paper deals with the study of the photoresponse properties of 4H-SiC UV-photodetector devices based on a thin junction following their testing in darkness and under UV light over the 200 to 400 nm range. An increase of the carrier harvesting for low implanted layer thickness was shown by simulation. Thus, an implantation at low energy (27 keV) was carried out on our samples. Because of the thin junction architecture, the photocurrent at 280 nm was found to be four orders of magnitude larger than the dark current. A spectral responsivity of our photodetectors shows a peak at 280 nm with a value of 0.03 A/W.