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机译:基于Cl_2 / Ar的电感耦合等离子体刻蚀中的GaN刻蚀速率和表面粗糙度演变
Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054, India;
Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054, India;
Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054, India;
Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054, India;
Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054, India;
Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054, India;
Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054, India;
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India;
Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India;
gallium nitride; high electron mobility transistors; mesa; inductively coupled plasma etching; etch rate; surface roughness;
机译:Cl_2 / BCl_3和Cl_2 / Ar电感耦合等离子体刻蚀GaN薄膜的特性
机译:使用Cl_2 / BCl_3 / Ar等离子体的电感耦合等离子体台面蚀刻InGaN / GaN发光二极管
机译:Cl_2 / Ar / BCl_3电感耦合等离子体对GaN / AlGaN异质结构的非选择性刻蚀
机译:利用电感耦合的Cl_2 / HBr和Cl_2 / Ar等离子体对Gan的蚀刻特性
机译:电感耦合等离子体刻蚀反应器中离子流和硅刻蚀速率的二维均匀性
机译:聚合物基底基于等离子体的表面工程中的粗糙度演变和带电:离子反射和二次电子发射的影响
机译:电感耦合AR / CL2等离子体蚀刻中具有GaN蚀刻速率的光发射和离子磁通的相关性
机译:基于BCl3的化学中III-V半导体的电感耦合等离子体蚀刻:第1部分:Gaas,GaN,Gap,Gasb和alGaas;应用表面科学