机译:组成对变化的O_2气流射频溅射沉积非晶In-Ga-Zn-O薄膜光学和电学性质的影响
Department of Optoelectronic System Engineering, Minghsin University of Science & Technology, Hsin-Fong, Hsin-Chu 30401, Taiwan, ROC;
Department of Optoelectronic System Engineering, Minghsin University of Science & Technology, Hsin-Fong, Hsin-Chu 30401, Taiwan, ROC;
Department of Optoelectronic System Engineering, Minghsin University of Science & Technology, Hsin-Fong, Hsin-Chu 30401, Taiwan, ROC;
National Nano Device Laboratories, Science-based Industrial Park, Hsin-chu 30078, Taiwan, ROC;
transparent oxide semiconductors; amorphous semiconductors; amorphous indium gallium zinc oxide; sputtering; film composition; structural analyses; optical transmittance; electrical characteristics;
机译:可变氧流量的射频磁控溅射制备非晶In-Ga-Zn-O薄膜晶体管的电学特性
机译:衬底温度对非晶In-Ga-Zn-O薄膜结构,电学和光学性质的影响
机译:射频磁控溅射生长各种O_2流的外延ZnO层的结构,电学和光学性质
机译:在各种溅射压力下沉积的非晶In-Ga-Zn-O薄膜的物理性质
机译:通过大功率脉冲磁控溅射沉积的银膜的电学和光学性质。
机译:组成对非晶GaxSe100-x纳米棒薄膜电学和光学性能的影响
机译:通过射频反应磁控溅射沉积的Ga-Zn-O薄膜中的扩散行为和电性能
机译:溅射沉积氧化锗(GEOX)薄膜的光学性质与化学成分的相关性(后印刷)。