Active roles of helium in the growth of hydrogenated microcrystalline silicon germanium thin films

摘要

A combination of hydrogen and helium dilutions was introduced when the microcrystalline silicon germanium (μc-SiGe∶H) thin films were prepared by very high frequency plasma enhanced chemical vapor deposition on a low-temperature substrate. An optimum helium flow rate was found to achieve the structural uniformity in the growth direction, while Ge content was found to nearly keep constant with varying flow rates of helium. An abundance of atomic H was detected in plasma due to the attendance of helium and no obvious photosensitivity deterioration was observed on the thin film with a high crystalline volume fraction. The active roles of helium were identified by analyzing the mechanism in the plasma, where both metastable He~*_m and He~+ can accelerate the diffusion of Ge related radicals and passivation of the dangling bonds on the growth surface, respectively. These phenomena have been revealed by experimental results. Therefore, a combination of hydrogen and helium dilutions can improve the structure of the uc-SiGe:H thin films with little degradation of photo-electronic properties.