首页> 外文期刊>Thin Solid Films >Realization of ultrathin silver layers in highly conductive and transparent zinc tin oxide/silver/zinc tin oxide multilayer electrodes deposited at room temperature for transparent organic devices
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Realization of ultrathin silver layers in highly conductive and transparent zinc tin oxide/silver/zinc tin oxide multilayer electrodes deposited at room temperature for transparent organic devices

机译:在室温下沉积用于透明有机器件的高导电性和透明的氧化锌锡/银/氧化锌锡多层电极中超薄银层的实现

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摘要

We report on transparent and highly conductive multilayer electrodes prepared at room temperature by RF sputtering of zinc tin oxide (ZTO) and thermal evaporation of ultrathin silver (Ag) as top contact for transparent organic light emitting diodes (TOLED). Specifically, we study the morphological, electrical and optical properties of the multilayer structure in particular of the thin Ag film. The tendency of Ag to form agglomerates over time on top of ZTO is shown by atomic force microscopy. From the optical constants derived from ellipsometric measurements we evidenced a bulk like behavior of an Ag film with a thickness of 8 nm embedded in ZTO leading to a low sheet resistance of 9 n/sq. Furthermore we verify the optical constants by simulation of an optimized ZTO/Ag/ZTO structure. As an application we present a highly efficient TOLED providing a device transmittance of > 82% in the visible part of the spectrum. The TOLED shows no damage caused by sputtering on a lighting area of 80 mm~2 and exhibits efficiencies of 43 cd/A and 36 lm/W.
机译:我们报告了在室温下通过RF溅射氧化锌锡(ZTO)和热蒸发超薄银(Ag)作为透明有机发光二极管(TOLED)的顶部触点而制备的透明且导电性高的多层电极。具体而言,我们研究了多层结构,特别是银薄膜的形态,电学和光学性质。随着时间的推移,Ag在ZTO上方形成附聚物的趋势由原子力显微镜显示。从椭偏测量得出的光学常数,我们证明了在ZTO中嵌入厚度为8 nm的Ag膜的块状行为,从而导致了9 n / sq的低薄层电阻。此外,我们通过模拟优化的ZTO / Ag / ZTO结构来验证光学常数。作为一种应用,我们提出了一种高效的TOLED,它在光谱的可见光部分提供了大于82%的器件透射率。 TOLED在80 mm〜2的照明面积上没有显示出因溅射引起的损坏,效率为43 cd / A和36 lm / W。

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  • 来源
    《Thin Solid Films》 |2012年第14期|p.4669-4673|共5页
  • 作者单位

    Institutfur Hochfrequenztechnik, Technische Universitat Braunschweig, Schleinitzstr. 22, 38106 Braunschweig, Germany;

    Institutfur Hochfrequenztechnik, Technische Universitat Braunschweig, Schleinitzstr. 22, 38106 Braunschweig, Germany;

    Institutfur Hochfrequenztechnik, Technische Universitat Braunschweig, Schleinitzstr. 22, 38106 Braunschweig, Germany;

    Institutfur Hochfrequenztechnik, Technische Universitat Braunschweig, Schleinitzstr. 22, 38106 Braunschweig, Germany;

    Institutfur Hochfrequenztechnik, Technische Universitat Braunschweig, Schleinitzstr. 22, 38106 Braunschweig, Germany;

    Institutfur Hochfrequenztechnik, Technische Universitat Braunschweig, Schleinitzstr. 22, 38106 Braunschweig, Germany;

    Institutfur Hochfrequenztechnik, Technische Universitat Braunschweig, Schleinitzstr. 22, 38106 Braunschweig, Germany;

    Institutfur Hochfrequenztechnik, Technische Universitat Braunschweig, Schleinitzstr. 22, 38106 Braunschweig, Germany;

    Institutfur Hochfrequenztechnik, Technische Universitat Braunschweig, Schleinitzstr. 22, 38106 Braunschweig, Germany;

    Institute of Electronic Devices, Bergische Universitat Wuppertal, Rainer-Cruenter Str. 21, 42119 Wuppertal, Germany;

    Institutfur Hochfrequenztechnik, Technische Universitat Braunschweig, Schleinitzstr. 22, 38106 Braunschweig, Germany;

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  • 正文语种 eng
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  • 关键词

    transparent conducting oxides; organic electronics; zinc-based oxides; transparent OLED; multilayer electrode; inverted OLED; molybdenum oxide; tin based oxides;

    机译:透明导电氧化物;有机电子产品;锌基氧化物;透明OLED;多层电极反向OLED;氧化钼锡基氧化物;

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