The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

摘要

The Implant-Free Quantum Well Field-Effect Transistor (FET) offers enhanced scalability in a planar architecture through the integration of heterostructures. The Implant-Free architecture fully utilizes the band offsets between different materials, whereby charge carriers are effectively confined to a thin channel layer. This prevents sub-surface source/drain leakage observed in classical bulk Metal-Oxide-Semiconductor FETs at small gate lengths. An investigation of the V_T-tuning capabilities of this technology reveals sensitivity to both well doping and bulk voltage.