Highly (100)-oriented Ce_(1-x)Fe_xO_(2-δ) solid solution films prepared by laser chemical vapor deposition

摘要

Ce_(1-x)Fe_xO_(2-δ) solid solution films were prepared on amorphous silica substrates by laser chemical vapor deposition using metal dipivaioylmethanate precursors and a semiconductor InGaAlAs (808 nm in wavelength) laser. X-ray diffraction revealed the formation of single Ce_(1-x)Fe_xO_(2-δ) phase at x≤0.15, while CeO_2 and Fe_2O_3 phases were found for higher Fe content. Highly (lOO)-oriented Ce_(1-x)Fe_xO_(2-δ) (x=0.02) films were obtained at laser power, P_L=50-200 W and deposition temperature, T_(dep) = 800-1063 K. Lotgering factor (200) was calculated to be above 0.8 for films prepared at P_L=50-150 W. X-ray photoelectron spectroscopy revealed the presence of Fe~(3+), Ce~(4+) and Ce~(3+) on solid solution films. Cross-sectional transmission electron microscope images disclosed a film columnar feather-like structure with a large number of nano-scale interspaces. Deposition rates were 2 or 3 orders of magnitude higher than those reported for conventional metal organic chemical vapor deposition of CeO_2.