机译:活性射频溅射沉积和氮化锌和氮氧化物薄膜的表征
Department of Electrical Engineering and Computer Science, Mail Stop 308, University of Toledo, Toledo, OH 43606, USA;
Department of Electrical Engineering and Computer Science, Mail Stop 308, University of Toledo, Toledo, OH 43606, USA;
Department of Mechanical, Industrial, and Manufacturing Engineering, Mail Stop 312, University of Toledo, Toledo, OH 43606, USA;
Department of Mechanical, Industrial, and Manufacturing Engineering, Mail Stop 312, University of Toledo, Toledo, OH 43606, USA;
zinc nitride; zinc oxynitride; reactive radio-frequency sputtering; X-ray diffraction; scanning electron microscopy; electron diffraction spectroscopy; raman spectroscopy; hall effect measurements;
机译:射频(RF)溅射在丙烷气敏应用中沉积和表征超薄本征氧化锌(i-ZnO)膜
机译:射频反应磁控溅射AlN薄膜的沉积与表征
机译:射频磁控反应溅射在大气中各种N-2含量下沉积在聚醚砜上的氮氧化硅薄膜的透气性能
机译:通过用线性气体离子源和偏置电压沉积和表征氮化锆(ZrN)薄膜薄膜溅射
机译:用于电子和光伏应用的氮化锌和氮化氧薄膜的反应溅射沉积和表征。
机译:射频等离子体增强化学气相沉积(RF PECVD)反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
机译:氮化钽薄膜的结构和电学性能 采用反应射频磁控溅射法制备
机译:反应溅射沉积法制备锌,铝和钒(及相关系统,金和锗氧化物,铝和钨氮化物)氧化物的低温薄膜生长