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机译:衬底偏压和加氢量对用Ar / N_2反应气体溅射B_4C靶制备的六方结构BCN膜的残余应力的影响
Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, South Korea;
Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, South Korea;
Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, South Korea;
Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, South Korea;
BCN with hexagonal structure; Compressive residual stress; Hydrogen addition; Ar incorporation; Substrate bias;
机译:氢对r.f.制备的立方氮化硼相B-C-N薄膜残余应力的影响B_4C靶的磁控溅射
机译:N_2:(N_2 + Ar)的流量比和衬底温度对反应性直流磁控溅射制备氮化锆膜性能的影响
机译:反应溅射钛靶在Ar / CH_4 / N_2混合气体中的沉积薄膜的磁滞,结构和组成特征
机译:直流偏置对Tivcrzrtan膜通过反应性RF磁控溅射的微观结构,残余应力和硬度特性
机译:溅射的铬和铬(x)氮(y)薄膜的微观结构和残余应力的演变。
机译:溅射气体聚集制备的钴纳米颗粒薄膜的可控氧化优化交换偏向
机译:直流偏压对活性射频磁控溅射TiVCrZrTaN薄膜微结构,残余应力和硬度性能的影响