Enhancement of the light-scattering ability of Ga-doped ZnO thin films using SiO_x nano-films prepared by atmospheric pressure plasma deposition system

摘要

To enhance the light-trapping qualities of silicon thin-film solar cells, the use of transparent conductive oxide with high haze and high conductivity is essential. This study investigated an eco-friendly technique that used bi-layer Ga-doped zinc oxide/SiO_x films prepared with an atmospheric pressure plasma jet to achieve high haze and low resistivity. A minimum resistivity of 6.00 × 10~(-4) Ω·cm was achieved at 8 at.% gallium doping. Examination of X-ray diffraction spectra showed that increased film thickness led to increased carrier concentration in GZO bilayers. The optimal bilayer GZO film achieved considerably higher haze values in the visible and NIR regions, compared with Asahi U-type fluorine doped tin oxide.