Epitaxial growth of ferromagnetic semiconductor Ga_(1-x)Mn_xAs film on Ge(001) substrate

摘要

We have grown a high-quality epitaxial Ga_(1-x)Mn_xAs (x = 0.06) film on a Ge(001) substrate without a buffer layer by using low-temperature molecular beam epitaxy. The transmission electron microscope image revealed an atomically flat Ga_(1-x)Mn_xAs(001)/Ge(001) interface as well as the absence of precipitates such as MnAs. The film exhibited clear hysteresis in the magnetization curves at low temperatures, indicating a ferromagnetic Ga_(1-x)Mn_xAs film. The Curie temperature of the Ga_(1-x)Mn_xAs/Ge sample was strongly enhanced by post-growth annealing, which was similar to the Ga_(1-x)Mn_xAs/GaAs reference sample. Such results will accelerate the integration of Ⅲ-Mn-Ⅴ ferromagnetic semiconductors into Ge-based spintronics devices.