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机译:2 MeV电子辐照对硅上沉积的原子层高k栅极电介质的体积和界面的影响
Depanamento de Electricidad y Electronica, ETSl Telecomunicacion, Universidad de Valladolid, 47011 Valladolid, Spain;
Depanamento de Electricidad y Electronica, ETSl Telecomunicacion, Universidad de Valladolid, 47011 Valladolid, Spain;
Depanamento de Electricidad y Electronica, ETSl Telecomunicacion, Universidad de Valladolid, 47011 Valladolid, Spain;
Depanamento de Electricidad y Electronica, ETSl Telecomunicacion, Universidad de Valladolid, 47011 Valladolid, Spain;
Institut de Microelectronica de Barcelona (IMB-CNM), CSIC, Campus UAB. 08193 Bellaterra, Spain;
Institut de Microelectronica de Barcelona (IMB-CNM), CSIC, Campus UAB. 08193 Bellaterra, Spain;
Institut de Microelectronica de Barcelona (IMB-CNM), CSIC, Campus UAB. 08193 Bellaterra, Spain;
Institut de Microelectronica de Barcelona (IMB-CNM), CSIC, Campus UAB. 08193 Bellaterra, Spain;
Department of Electronic Engineering, Kumamoto National College of Technology, Kumamoto 861-1102,Japan;
Department of Electronic Engineering, Kumamoto National College of Technology, Kumamoto 861-1102,Japan;
Department of Electronic Engineering, Kumamoto National College of Technology, Kumamoto 861-1102,Japan;
high-k dielectrics; electrical characterization; irradiation; hafnium oxide; aluminum oxide; atomic layer deposition;
机译:2 MeV电子辐照对原子层沉积Al_2O_3,HfO_2和纳米层状电介质的金属氧化物硅电容器的电特性的影响
机译:电应力对原子层沉积Al_2O_3,HfO_2和纳米叠层电介质的2 MeV电子辐照的金属氧化物-硅电容器的电特性的影响
机译:原子层沉积的TaC_y金属栅极:对HfO_2高k电介质的微观结构,电性能和功函数的影响
机译:电子辐照对原子层沉积的高k栅极电介质的影响
机译:使用III-V半导体在原子层上沉积高k栅极电介质的MOS接口的研究。
机译:使用Al2O3势垒层控制原子层沉积的Al2O3 / La2O3 / Al2O3栅堆叠中的硅扩散控制
机译:NH3退火的原子层沉积氮化硅,作为高k栅极电介质,具有高可靠性