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首页> 外文期刊>Thin Solid Films >Interface width evaluation in thin layered CoFeB/MgO multilayers including Ru or Ta buffer layer by X-ray reflectivity
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Interface width evaluation in thin layered CoFeB/MgO multilayers including Ru or Ta buffer layer by X-ray reflectivity

机译:通过X射线反射率评估包含Ru或Ta缓冲层的CoFeB / MgO多层薄层中的界面宽度

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摘要

To elucidate in details any possible influence of the adjacent layers on perpendicular magnetic anisotropy in very thin ferromagnetic CoFeB electrodes of CoFeB/MgO based stacks, we grew by sputtering BL/CoFeB (1 nm) and BL/CoFeB (1 nm)/MgO (2 nm), being BL (buffer layer) =Ta (5 nm) or Ru (1 nm) multilayers, consisting of 30 repetitions of the bi- or tri-layers. Specular X-ray reflectivity (XRR) has been performed on both as grown and annealed (300 °C in vacuum) multilayers. From XRR results, good reproducibility of each layer thickness is achieved, indicating a well-controlled film growth. Further, CoFeB/MgO interface is found to be quite smooth and stable with annealing, as shown by the limited interface width, while BL/CoFeB interface widens upon annealing, in particular when BL=Ta is used. We discuss the above findings, also considering the role of possible layer crystallinity in affecting the interface width, and tentatively relate them to the magnetic anisotropic behavior of the stacks.
机译:为了详细阐明CoFeB / MgO基堆叠的非常薄的铁磁CoFeB电极中相邻层对垂直磁各向异性的任何可能影响,我们通过溅射BL / CoFeB(1 nm)和BL / CoFeB(1 nm)/ MgO( 2纳米),是BL(缓冲层)= Ta(5纳米)或Ru(1纳米)多层,由30层双层或三层重复组成。在生长和退火(真空中为300°C)的多层膜上均进行了镜面X射线反射率(XRR)。根据XRR结果,可以实现每个层厚度的良好重现性,表明可以很好地控制膜的生长。此外,发现CoFeB / MgO界面在退火时非常光滑且稳定,如有限的界面宽度所示,而BL / CoFeB界面在退火时变宽,特别是当使用BL = Ta时。我们讨论了上述发现,同时考虑了可能的层结晶度在影响界面宽度中的作用,并将它们与叠层的磁各向异性行为初步联系起来。

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