Encapsulation of high frequency organic Schottky diodes

摘要

Both operational lifetime and shelf-life of copper phthalocyanine (CuPc) based high frequency Schottky diodes have been studied in this work. Thin films of amorphous Si (α-Si) and polychloro-(para-xylylene) (parylene C) are deposited as a barrier layer using low temperature chemical vapor deposition to improve the lifetime of the CuPc Schottky diodes. The CuPc Schottky diodes encapsulated with the barrier layer exhibit at least 6× longer operational lifetime under both DC and AC voltage stress. Encapsulation does not significantly improve the shelf-life of the organic Schottky diodes.