机译:同轴结构的ZnO /硅纳米线扩展栅场效应晶体管作为pH传感器
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electronics Engineering, St. John's University, Taipei 25335, Taiwan;
Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 30076, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electronics Engineering, St. John's University, Taipei 25335, Taiwan;
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan;
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan;
extended-gate field-effect transistors; (EGFET); ph sensor; zinc oxide (ZNO); atomic layer deposition (ALD); electroless metal deposition (EMD); low temperature;
机译:IGZO纳米粒子修饰的硅纳米线作为扩展栅场效应晶体管pH传感器
机译:一种使用扩展栅场效应晶体管和SiO2 / Si模板上制备的Ga2O3纳米线的新型pH传感器
机译:作为pH传感器的高灵敏度扩展栅场效应晶体管,其中在不同的反金字塔硅结构上涂覆了氧改性的氧化石墨烯薄膜作为传感头
机译:扩展门场效应晶体管基于电位吸附测量分子吸附事件的新型酶免疫测定
机译:用于气体传感器应用的纳米线场效应晶体管
机译:基于不同温度退火双层MWCNTs-In2O3薄膜的扩展栅场效应晶体管pH传感器的研究
机译:基于不同温度退火双层MWCNTs-InO薄膜的扩展栅场效应晶体管pH传感器的研究