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首页> 外文期刊>Thin Solid Films >Large piezoelectric effect in lead-free Ba(Zr_(0.2)Ti_(0.8))O_3-(Ba_(0.7)Ca_(0.3))TiO_3 films prepared by screen printing with solution infiltration process
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Large piezoelectric effect in lead-free Ba(Zr_(0.2)Ti_(0.8))O_3-(Ba_(0.7)Ca_(0.3))TiO_3 films prepared by screen printing with solution infiltration process

机译:溶液浸渗丝网印刷制备的无铅Ba(Zr_(0.2)Ti_(0.8))O_3-(Ba_(0.7)Ca_(0.3))TiO_3薄膜的压电效应大

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摘要

High-quality piezoelectric Ba(Zr_(0.2)Ti_(0.8))O_3-50(Ba_(0.47)Ca_(0.3))TiO_3 films with very dense and homogenous micro-structure were fabricated using chemical solution infiltration into porous screen-printed films. The films with a thickness of 10μm exhibited high relative permittivity of 2380, low dielectric loss of 1.6% (at 10 kHz), large remanent polarization of 22 μC/cm~2, and large longitudinal piezoelectric constant d_(33) of 220 pC/N, which is even better than the case of lead-based piezoelectric films. The excellent electrical properties make the films a promising candidate for practical applications in lead-free microdevices such as piezoelectric microelectromechanical systems.
机译:利用化学溶液浸渗到多孔丝网印刷膜中,制备了具有非常致密且均匀的微观结构的高质量压电Ba(Zr_(0.2)Ti_(0.8))O_3-50(Ba_(0.47)Ca_(0.3))TiO_3膜。厚度为10μm的薄膜具有2380的高相对介电常数,在10 kHz时的介电损耗低至1.6%,剩余极化强度大(22μC/ cm〜2)和纵向压电常数d_(33)大(220 pC / N,甚至比铅基压电薄膜更好。优异的电性能使该膜成为无铅微器件(如压电微机电系统)实际应用的有前途的候选者。

著录项

  • 来源
    《Thin Solid Films 》 |2013年第1期| 110-113| 共4页
  • 作者单位

    School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China,Institute for Superconducting and Electronic Materials, University of Wollongong, Squires Way, North Wollongong, NSW 2500, Australia;

    Institute for Superconducting and Electronic Materials, University of Wollongong, Squires Way, North Wollongong, NSW 2500, Australia;

    Institute for Superconducting and Electronic Materials, University of Wollongong, Squires Way, North Wollongong, NSW 2500, Australia;

    School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China;

    School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ferroelectric films; lead-free; solution infiltration; dielectrics and piezoelectricity;

    机译:铁电薄膜无铅溶液渗透电介质和压电;

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