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机译:低温金属有机射频等离子体增强化学气相沉积法原位掺杂氢化非晶碳中的
Department of Electrical and Computer Engineering, University of Toronto, ON M5S 3G4, Canada;
Department of Electrical and Computer Engineering, University of Toronto, ON M5S 3G4, Canada;
Department of Electrical and Computer Engineering, University of Toronto, ON M5S 3G4, Canada;
Centre for Interdisciplinary Science, National Chiao Tung University, Hsinchu 30010, Taiwan,Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electrical and Computer Engineering, University of Toronto, ON M5S 3G4, Canada;
Centre for Interdisciplinary Science, National Chiao Tung University, Hsinchu 30010, Taiwan,Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Materials Science and Engineering, I-Shou University, Kaohsiung 84001, Taiwan;
Department of Electrical and Computer Engineering, University of Toronto, ON M5S 3G4, Canada;
Department of Electrical and Computer Engineering, University of Toronto, ON M5S 3G4, Canada,Department of Materials Science and Engineering, University of Toronto, ON M5S 3E4, Canada;
Erbium metalorganic compound; Hydrogenated amorphous carbon (a-C:H); Fluorination;
机译:气压对射频等离子体增强化学气相沉积法制备掺硼氢化非晶碳薄膜的影响
机译:射频功率对等离子体增强化学气相沉积生长的氢化非晶碳薄膜的热扩散率的影响
机译:低频(60 Hz)等离子体增强化学气相沉积(PECVD)施加的功率对氢化非晶碳(a-C:H)膜沉积的影响
机译:原位等离子体分析,通过等离子体增强化学气相沉积法沉积在Si上的氟化非晶碳和氢化非晶碳薄膜的氟掺入,热稳定性,应力和硬度比较
机译:晶格匹配的III-V / IV组半导体异质结构:金属有机化学气相沉积和远程等离子体增强化学气相沉积。
机译:N2:(N2 + CH4)比在低温等离子体增强化学气相沉积法生长疏水纳米结构氢化氮化碳薄膜中的作用研究
机译:在低衬底温度下通过射频等离子体增强化学气相沉积法沉积的掺杂非晶硅和纳米晶硅的电子和结构性质