Fabrication of epitaxial Co_2MnSi films on lattice-matched MgAl_2O_4 substrates by ion-beam assisted sputtering

摘要

We show that epitaxial Co_2MnSi films can be fabricated on lattice-matched MgAl_2O_4 substrates using an ion-beam-assisted sputtering method. Low temperature growth below ～500 ℃ with Ar ion-beam assistance enabled high-quality Co_2MnSi films with ideal saturation magnetization and highly-ordered L2_1 structures. The Co_2MnSi films also demonstrated a negative anisotropic magnetoresistance of ～0.1% at room temperature, which is a typical characteristic of half-metals. These results suggest that ion-beam assisted sputtering is an effective method of fabricating high-quality, half-metallic Co_2MnSi films at low growth temperatures.