...
机译:三甲基甲硅烷基环戊二烯基三(二甲基氨基)锆作为单源金属前驱体,用于Zr_xSi_(1-x)O_4原子层沉积
Thin Film Materials Group, Korea Research Institute of Chemical Technology, 141 Gajeong-Ro, Yuseong-gu, Daejeon 305-600, Republic of Korea;
Thin Film Materials Group, Korea Research Institute of Chemical Technology, 141 Gajeong-Ro, Yuseong-gu, Daejeon 305-600, Republic of Korea;
Thin Film Materials Group, Korea Research Institute of Chemical Technology, 141 Gajeong-Ro, Yuseong-gu, Daejeon 305-600, Republic of Korea;
Thin Film Material Team, Hansol Chemical, 816 Wanju-gun, Jeonbuk 565-904, Republic of Korea;
Thin Film Material Team, Hansol Chemical, 816 Wanju-gun, Jeonbuk 565-904, Republic of Korea;
Thin Film Materials Group, Korea Research Institute of Chemical Technology, 141 Gajeong-Ro, Yuseong-gu, Daejeon 305-600, Republic of Korea;
Thin Film Materials Group, Korea Research Institute of Chemical Technology, 141 Gajeong-Ro, Yuseong-gu, Daejeon 305-600, Republic of Korea;
Thin Film Materials Group, Korea Research Institute of Chemical Technology, 141 Gajeong-Ro, Yuseong-gu, Daejeon 305-600, Republic of Korea;
Single-source precursor; Bimetal precursor; Zirconium silicate; Trimethylsilylcyclopentadienyl; tris(dimethylamino)zirconium;
机译:工艺温度对三(二甲基氨基)环戊二烯基锆前体原子层沉积ZrO2薄膜结构和电性能的影响
机译:基于FT-IR和QM的原子层沉积的气相环戊二烯基Tris(二甲基氨基)锆(CPZR(NME 2 sub>)的锆(二甲基氨基)锆(CPZR(NME
机译:金属门金属氧化物半导体场效应晶体管四(二甲基氨基)钛前体原子层沉积形成TiN膜的热稳定性研究
机译:使用三(二甲基氨基)硅烷(TDMAS)和臭氧通过原子层沉积法生长的超薄SiO_2薄膜
机译:使用叔丁基亚氨基三(二乙基氨基)钽金属有机前驱体的Ta基扩散阻挡层的化学气相沉积和原子层沉积
机译:基于FT-IR和QM的气相环戊二烯基Tris(二甲基氨基)锆(CpZR(NME2)3)的原位监测系统的热分解基于FT-IR和原子层沉积
机译:基于TRIS(二甲基氨基)硅烷前体的SiO2生长速率与金属氧化物底层电阻率的电阻性差异的相关性
机译:用于太阳能盲紫外探测器的al(x)Ga(1-x)N原子层化学气相沉积