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首页> 外文期刊>Thin Solid Films >Orientation control and electrical properties of YBa_2Cu_3O_(7-δ) deposited onto CeO_2 buffer films by laser chemical vapor deposition using liquid source precursors
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Orientation control and electrical properties of YBa_2Cu_3O_(7-δ) deposited onto CeO_2 buffer films by laser chemical vapor deposition using liquid source precursors

机译:使用液体源前驱体通过激光化学气相沉积法在CeO_2缓冲膜上沉积的YBa_2Cu_3O_(7-δ)的取向控制和电性能

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摘要

CeO_2 and YBa_2Cu_3O_(7-δ) (YBCO) films were deposited onto multilayer-coated Hastelloy C276 tape by laser chemical vapor deposition using liquid source precursors. The effect of the thickness of the CeO_2 buffer film grown at 720 K on the orientation and electrical properties of the YBCO has been investigated. The optimal thickness of the CeO_2 layer was found to be 97 nm resulting in the highest critical temperature of 90 K and a critical current density of 0.6 MA cm~(-2). The deposition rate of the YBCO films was approximately 7 μm h~(-1).
机译:将CeO_2和YBa_2Cu_3O_(7-δ)(YBCO)膜通过使用液体源前驱体的激光化学气相沉积法沉积到多层涂覆的Hastelloy C276胶带上。研究了在720 K下生长的CeO_2缓冲膜的厚度对YBCO的取向和电性能的影响。发现CeO_2层的最佳厚度为97 nm,导致最高临界温度为90 K,临界电流密度为0.6 MA cm〜(-2)。 YBCO薄膜的沉积速率约为7μmh〜(-1)。

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