High-luminance and high-efficiency multi-chip light-emitting diode array packaging platform with nanoscale anodized aluminum oxide on silicon substrate

摘要

A silicon-based packaging platform is developed for the packaging component of a high-luminosity and high-efficiency multi-chip light-emitting diode (LED) module, which is patterned on an insulating layer that consists of a nanoporous anodized aluminum oxide (MO) layer and silicon dioxide (SiO_2) deposited by plasma-enhanced chemical vapor deposition on a doped silicon substrate. Compared to a single thick layer of SiO_2 on a conductive silicon substrate, the proposed substrate (SiO_2/AAO/Si) was proven to be effective in terms of its abilities to reduce the insertion loss and to increase thermal conduction. The proposed structure can be used to effectively improve the reliability and reduce the thermal fatigue of high-luminance and high-efficiency LED array modules. We demonstrate an 8 W, cool-white (5700 K) LED array with a chip size of 570 μm × 550 μm, exhibiting a luminous intensity of 100 lm/W and a color rendering index of more than 83 at the forward current and voltage of 610 M.A. and 16.1 V, respectively.