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机译:低镁掺杂的p-GaN肖特基二极管的SiN沉积损伤的高温等温电容瞬态光谱研究
Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;
Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;
Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;
Graduate School of Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan,Research and Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable Ltd., 3550 Kidamari, Tsuchiura, Ibaraki 300-0026, Japan;
Department of Electrical Engineering, University of Notre Dame, 228 Stinson Remick, Norte Dame, IN 46556, USA;
Research and Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable Ltd., 3550 Kidamari, Tsuchiura, Ibaraki 300-0026, Japan;
p-GaN; Contact; Damage; SiN deposition; ICTS;
机译:p-GaN表面电感耦合等离子体刻蚀损伤的高温等温电容瞬态光谱研究
机译:p-GaN肖特基接触的等温电容瞬态光谱研究
机译:P-GaN肖特基触点的等温电容瞬态光谱研究
机译:4H-SIC肖特基二极管和PIN二极管的深层瞬态光谱(DLTS)研究
机译:弹道电子发射显微镜研究聚焦离子束注入损坏的金/砷化镓肖特基二极管中电子的散射。
机译:湿度影响α粒子辐照的Al / DNA / Al肖特基二极管的电容和电阻
机译:用深层瞬态光谱研究了离子辅助栅极凹陷工艺对alGaN / GaN肖特基势垒二极管GaN沟道的损伤
机译:双极晶体管和二极管电瞬态失效 - 预测失效建模与实验损伤测试。 1结电容损伤模型