机译:低碳掺杂GaN层中多种缺陷状态及其与AlGaN / GaN高电子迁移率晶体管工作相关性的研究
Graduate School of Electrical and Electronics Engineering, University of Fukui, Japan,Engineering Dept., Compound Semiconductor Products Business Unit, Cable Materials Company, Hitachi Metals, Ltd., Isagozawa 880, Hitachi City, Ibaraki 319-1418, Japan;
Graduate School of Electrical and Electronics Engineering, University of Fukui, Japan;
Engineering Dept., Compound Semiconductor Products Business Unit, Cable Materials Company, Hitachi Metals, Ltd., Isagozawa 880, Hitachi City, Ibaraki 319-1418, Japan;
Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Japan;
Carbon doping; AlGaN/GaN HEMT; Current collapse; DLTS; Trap;
机译:研究i-GaN,n-GaN,p-GaN和InGaN盖层对AlGaN / GaN高电子迁移率晶体管的影响
机译:射频工作期间AlGaN / GaN高电子迁移率晶体管的热电子降解:与GaN缓冲设计的关系
机译:使用Algan / Aln / GaN应力缓解层对高电子迁移率晶体管应用的Si衬底上生长的GaN缓冲器结构特征的原位应力进化及其相关性
机译:GaN缓冲层质量对AlGaN / GaN高电子迁移率晶体管的dc特性的影响的研究
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
机译:alGaN / GaN高电子迁移率晶体管器件物理缺陷与性能的相关性
机译:Ni栅alGaN / GaN高电子迁移率晶体管的场致缺陷形貌。