Filling performance and electrical characteristics of Al_2O_3 films deposited by atomic layer deposition for through-silicon via applications

摘要

We have evaluated the conformality and electrical properties of Al_2O_3 films deposited by atomic layer deposition at temperatures below 300 ℃ for through-silicon via (TSV) applications. Al_2O_3 films were able to be conformally deposited on the scallops of 50-μm-wide, 100-μm-deep TSV at the temperature range between 200 and 300 ℃ The median breakdown fields of the metal-insulator-metal device with 30-nm-thick Al_2O_3 layer were above 6 MV/cm for the films deposited at 250 and 300 ℃ while that at 200 ℃ was inferior due to residual carbon impurities in the oxide layer.