Properties of polymer light-emitting transistors with Ag-nanowire source/drain electrodes fabricated on polymer substrate

摘要

The properties of polymer light-emitting transistors with Ag-nanowire (AgNW) source/drain electrodes fabricated on a polymer substrate are investigated. Organic field-effect transistors (OFETs) based on poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) with AgNW source/drain electrodes exhibit ambipolar characteristics. For an ambipolar F8BT OFET, yellow-green light emission is observed. The maximum external quantum efficiency is 0.6%. We demonstrate the possibility of producing flexible polymer light-emitting transistors using AgNW electrodes.