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机译:快速热后退火反应磁控溅射SnO_2:F薄膜
Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, UEberlandstrasse 129,8600 Duebendorf, Switzerland;
Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, UEberlandstrasse 129,8600 Duebendorf, Switzerland;
ETH Zuerich, Swiss Federal Institute of Technology, Laboratory of Ion Beam Physics, Schafmattstrasse 20, 8093 Zuerich, Switzerland;
Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, UEberlandstrasse 129,8600 Duebendorf, Switzerland;
Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, UEberlandstrasse 129,8600 Duebendorf, Switzerland;
Transparent conducting oxide; Fluorine doped tin oxide; Magnetron sputtering; Rapid thermal annealing; Low emissive coatings;
机译:溅射压力和后退火对反应磁控溅射沉积TiO_2薄膜亲水性的影响
机译:直流磁控反应溅射和氧后退火制备的纳米结构VO_x薄膜的电学和光学性质
机译:活性射频磁控溅射氮化碳薄膜中的后退火效应
机译:通过室温反应磁控溅射和快速热退火制备的高性能VO2薄膜
机译:在高温“智能”摩擦应用中,在封闭场不平衡磁控溅射中反应性沉积的氮化铝压电薄膜。
机译:快速热退火用于射频磁控溅射沉积的高质量ITO薄膜
机译:高功率脉冲磁控溅射和直流磁控溅射反应溅射ZrH2薄膜