首页> 外文期刊>Thin Solid Films >Tunable hysteresis in metal-insulator transition of nanostructured vanadium oxide thin films deposited by reactive direct current magnetron sputtering
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Tunable hysteresis in metal-insulator transition of nanostructured vanadium oxide thin films deposited by reactive direct current magnetron sputtering

机译:反应性直流磁控溅射沉积纳米结构钒氧化物薄膜的金属-绝缘体转变中的可调节磁滞

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摘要

Nanostructured vanadium oxide (nano-VOx) films were deposited at low temperature on glass substrates by reactive direct current (DC) magnetron sputtering followed by in-situ annealing process. The chemical compositions, crystal structures, morphologies and metal-insulator transition (MIT) properties of nano-VOx films were investigated. The experimental results indicate that deposition conditions (reactive O_2 gas flow rates, annealing temperatures and annealing times) have important effects on film morphologies (grain shapes and grain sizes) which profoundly affect the MIT properties of VOx films, especially the hysteresis width. The film consisting of spheroidal small particles shows a large hysteresis width due to the small density of nucleating defects and large interfacial energies, whereas the film consisting of the misshapen and/or large particles shows a small hysteresis width due to the large density of nucleating defects. These experimental results suggest that reactive DC magnetron sputtering is an effective process for preparing high-quality thermochromic nano-VOx films with tunable hysteresis widths and surface morphologies.
机译:纳米结构化的钒氧化物(nano-VOx)薄膜在低温下通过反应性直流(DC)磁控管溅射法沉积在玻璃基板上,然后进行原位退火工艺。研究了纳米VOx薄膜的化学成分,晶体结构,形貌和金属-绝缘体转变(MIT)性能。实验结果表明,沉积条件(反应性O_2气体流量,退火温度和退火时间)对膜的形貌(晶粒形状和晶粒尺寸)有重要影响,这对VOx膜的MIT特性(尤其是磁滞宽度)产生了深远的影响。由球形小颗粒组成的薄膜由于成核缺陷的密度小和界面能大而具有较大的磁滞宽度,而由变形和/或大颗粒组成的薄膜由于成核缺陷的密度大而具有较小的磁滞宽度。 。这些实验结果表明,反应性直流磁控溅射是制备具有可调磁滞宽度和表面形态的高质量热致变色纳米VOx膜的有效方法。

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  • 来源
    《Thin Solid Films》 |2014年第3期|218-224|共7页
  • 作者单位

    School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China,School of Science, Shandong University of Technology, ZiBo, Shandong 255049, PR China;

    School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China;

    Research Center of Laser Fusion, Chinese Academy of Engineering Physics, MianYang, Sichuan 621900, PR China;

    School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China;

    School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Nanostructured vanadium oxide; Hysteresis width; Reactive direct current magnetron sputtering; Thin films; Metal-insulator transition;

    机译:纳米结构钒氧化物;磁滞宽度;反应式直流磁控溅射;薄膜;金属-绝缘体过渡;

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